WBG Semiconductors
Wide Bandgap (WBG) Semiconductor. Designing GaN devices for Power/RF applications.
GaN enables smaller, more efficient, and lower-cost power systems, etc. For the automotive industry, this means smaller, lighter batteries, improved charging performance. Renewable energy that advances worldwide, by using GaN power semiconductors results in more efficient power conversion. Renewable energy systems require both DC/DC and DC/AC converters. Using GaN transistors in renewable energy inverters improves power density, minimizes heat dissipation, and reduces the size of passive components. Additionally, GaN advances capabilities in the vehicle autonomous and wireless power applications. GaN is a leading-edge semiconductor technology that switches 20x faster than legacy silicon devices (fast switching and fast charging).
Research scope
We design WBG semiconductor (GaN) devices through a combination of natural science and electrical engineering. By considering of exceptional material properties of this semiconductor and identifying physical principles that govern GaN devices, we apply our innovation on GaN semiconductor devices to achieve superior performance to cutting-edge technology.
Research goal:
- To make a bridge from invention to the industrialization of GaN devices.
- For high power/frequency applications, the figure of merit of the device should be increased by improvement of breakdown voltage, on-resistance, and operating frequency range.
Thereby the impact of our research is
- Lighter, smaller size, lower-cost, and more efficient power systems.
- Reduces the size of passive components, Fast charging.
- Minimize heat losses and power losses in high power applications and the switching losses at the high switching frequencies.
- Reduction of pollution (CO2).
Research topics
- Design of Lateral and Vertical GaN FET.
- Addressing the challenges of current technologies.
- Manage trade-off between Breakdown voltage, On-resistance, Frequency operation, and size of the device.
Industrial Activities:
- Technical advisory of GaN device developer.